• 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor

5SHY3545L0016 ABB Semiconductor module thyristor

No.5SHY3545L0016
Product ID:.5SHY35L 4520
ABB model name :4500V 4000A
Directory description :Asymmetric Thyristor IGCT
Additional information
ABB model name :4500V 4000A
Country of Origin :Switzerland (CH)
Customs Tariff number :8541300000
Dimensions: Spare_Parts
Total volume: 3.114dm
Gross weight: 2.9kg
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
  • 5SHY3545L0016   ABB   Semiconductor module thyristor
Desciption
Product ID:.5SHY35L 4520
ABB model name :4500V 4000A
Directory description :Asymmetric Thyristor IGCT
Additional information
ABB model name :4500V 4000A
Country of Origin :Switzerland (CH)
Customs Tariff number :8541300000
Dimensions: Spare_Parts
Total volume: 3.114dm
Gross weight: 2.9kg


Semiconductor module Thyristor is a high-power semiconductor device with a four-layer structure of three PN junctions, usually in the form of a module package. The module principle was first introduced into the field of power electronics technology by Siemenkang Company in 1970. It has the characteristics of control switch, can control the current switch, so as to achieve the protection and control of the circuit.

In electronic semiconductor thyristor modules, each module contains one or more thyristor switches that can be turned on or off by controlling the input signal, thereby controlling the flow of current. This modular design makes the application of electronic semiconductor SCR in the circuit more flexible and convenient.

In addition, the electronic semiconductor thyristor module also has the advantages of high reliability, high voltage resistance, low power consumption, fast response, etc., so it is widely used in industrial automation, power electronics, new energy and other fields. For example, in photovoltaic inverters, electronic semiconductor thyristor modules can be used to achieve the function of converting direct current to alternating current, while realizing the control and protection of current.


It should be noted that when using electronic semiconductor thyristor modules, it is necessary to select and configure them according to specific application scenarios and needs. At the same time, in order to ensure its normal operation and extend its service life, it is necessary to provide appropriate heat dissipation and protection measures.


5SHY3545L001 6 Desaturation detection uses the IGBT itself as a current measuring element.
The diode in the schematic ensures that the collector emitter voltage of the IGBT is only monitored by the detection circuit during the on-off period. In normal operation, the collector emitter voltage is very low (usually 1 V to 4V). However, if a short circuit event occurs, the IGBT collector current will. Rise to the level that drives the IGBT to exit the saturated area and enter the linear working area. This causes the collector emitter voltage to rise rapidly. The above normal voltage level can be used to indicate a short circuit in 5SHY3545L 006, while the threshold level for desaturation jumps is usually at 7 V
To the V range.
Mainly, desaturation can also indicate that the gate emitter voltage is too low and the IGBT is not fully driven to the saturated region. Desaturation detection should be deployed carefully to prevent false triggers. This may occur when the IGBT is not fully saturated, during the transition from the IGBT off state to the IGBT on state. The blanking time is usually between the on signal and the activation time of the desaturation detection to avoid false detection. A current source charging capacitor or RC filter is usually added to produce a short time constant in the detection mechanism to filter out filter spurious hopping caused by noise picking. When selecting these filters, it is necessary to balance immunity and response over the IGBT short circuit tolerance time.